* 4.5A, 600V(See Note), RDS(on) <2.5Ω@VGS = 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Equivalent Type: FQPF5N60C █ M.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,.

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