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HFF11N60S - N-Channel MOSFET

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

Features

  • s.
  • 10.8A, 600V(See Note), RDS(on).

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Datasheet Details

Part number HFF11N60S
Manufacturer HUASHAN ELECTRONIC
File Size 707.52 KB
Description N-Channel MOSFET
Datasheet download datasheet HFF11N60S Datasheet

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Full PDF Text Transcription

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Shantou Huashan Electronic Devices Co., Ltd. HFF11N60S N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. █ Features • 10.8A, 600V(See Note), RDS(on) <0.
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