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Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF640
APPLICATIONSL
High Voltage High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS=1M )
VGSS Gate-Source Voltage
ID *Drain Current Tc=25 * Drain current limited by maximumjunction temperature
5 5 ~1 5 0 150 43W 200V 200V
±20V
18A
ELECTRICAL CHARACTERISTICS Ta=25
TO-220F
1 1G 2D 3S
Symbol
Characteristic s
Min Typ
BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current
200
IGSS Gate –Source Leakage Current VGS(th) Gate Threshold Voltage
2.
HFF640 Datasheet
