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Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF2N60
APPLICATIONSL
High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current Tc=25
5 5 ~1 5 0 150 23W 600V
±30V
2.0A
TO-220F
1G 2D 3S
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ
BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current
600
IGSS Gate –Source Leakage Current VGS(th) Gate Threshold Voltage
2.
HFF2N60 Datasheet
