Download the H06N60E datasheet PDF.
This datasheet also covers the H06N60U-HI variant, as both devices belong to the same n-channel power field effect transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
Key Features
Robust High Voltage Termination.
Avalanc he Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to.
Full PDF Text Transcription for H06N60E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
H06N60E. For precise diagrams, and layout, please refer to the original PDF.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel Power Field Effect Tra...
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05.05.12 Page No. : 1/6 H06N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
H06N60E Datasheet
