H06N60E transistor equivalent, n-channel power field effect transistor.
* Robust High Voltage Termination
* Avalanc he Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to.
in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits whe.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation.
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