H01N60, H01N60-HI N-Channel Power Field Effect Transistor

HI-SINCERITY

Description

HI-SINCERITY MICROELECTRONICS CORP.H01N60 Series N-Channel Power Field Effect Transistor .
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

📥 Download Datasheet

H01N60 Datasheet Preview — This datasheet PDF includes multiple part numbers: H01N60, H01N60-HI. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H01N60, H01N60-HI
Manufacturer: HI-SINCERITY
File Size: 57.53 KB
Datasheet: H01N60-HI-SINCERITY.pdf
Description: N-Channel Power Field Effect Transistor
Note: This datasheet PDF includes multiple part numbers: H01N60, H01N60-HI.
Please refer to the document for exact specifications by model.

Features

* 1A, 600V, RDS(on)=8Ω@VGS=10V
* Low Gate Charge 15nC(Typ. )
* Low Crss 4pF(Typ. )
* Fast Switching
* Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC

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H01N60-HI N-Channel Power Field Effect Transistor HI-SINCERITY

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