H02N60S, H02N60S-HI N-Channel Power FET

HI-SINCERITY

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No.: 1/6 H02N60S Series N-Channel.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

📥 Download Datasheet

H02N60S Datasheet Preview — This datasheet PDF includes multiple part numbers: H02N60S, H02N60S-HI. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: H02N60S, H02N60S-HI
Manufacturer: HI-SINCERITY
File Size: 73.78 KB
Datasheet: H02N60S-HI-SINCERITY.pdf
Description: N-Channel Power FET
Note: This datasheet PDF includes multiple part numbers: H02N60S, H02N60S-HI.
Please refer to the document for exact specifications by model.

Features

* Robust High Voltage Termination
* Avalanc he Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature Absolute

H02N60S Distributors

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H02N60S-HI N-Channel Power FET HI-SINCERITY

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