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H02N60SJ, H02N60S-HI - N-Channel Power FET

HI-SINCERITY

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H02N60SJ Datasheet Preview — This datasheet PDF includes multiple part numbers: H02N60SJ, H02N60S-HI. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	H02N60SJ, H02N60S-HI
Manufacturer	HI-SINCERITY
File Size	73.78 KB
Description	N-Channel Power FET
Datasheet	H02N60S-HI-SINCERITY.pdf
Note	This datasheet PDF includes multiple part numbers: H02N60SJ, H02N60S-HI. Please refer to the document for exact specifications by model.

H02N60SJ Product details

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

Features

Robust High Voltage Termination.
Avalanc he Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings H02N60S Series Pin Assignment Tab 3 2 1 Tab 3 2 Tab 1 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-251 Package Code: I Pin 1.

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Published: Feb 12, 2016 |