Datasheet Details
Part number:
H02N60SJ, H02N60S-HI
Manufacturer:
HI-SINCERITY
File Size:
73.78 KB
Description:
N-channel power fet.
Note:
This datasheet PDF includes multiple part numbers: H02N60SJ, H02N60S-HI.
Please refer to the document for exact specifications by model.
H02N60SJ, H02N60S-HI, N-Channel Power FET
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offer
H02N60SJ Features
* Robust High Voltage Termination
* Avalanc he Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature Absolute
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