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H01N45A, H01N45A-HI N-Channel Power Field Effect Transistor

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Description

HI-SINCERITY MICROELECTRONICS CORP.H01N45A N-Channel Power Field Effect Transistor .

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This datasheet PDF includes multiple part numbers: H01N45A, H01N45A-HI. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
H01N45A, H01N45A-HI
Manufacturer
HI-SINCERITY
File Size
44.18 KB
Datasheet
H01N45A-HI-SINCERITY.pdf
Description
N-Channel Power Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: H01N45A, H01N45A-HI.
Please refer to the document for exact specifications by model.

Features

* Typical RDS(on)=4.1Ω
* Extremely High dv/dt Capability
* 100% Avalanche Tested
* Gate Charge Minimized

Applications

* Switch Mode Low Power Supplies (SMPS)
* Low Power, Low Cost CFL (Compact Fluorescent Lamps)
* Low Power Battery Chargers Absolute Maximum Ratings Symbol VDS VDGR VGS ID ID IDM PD dv/dt Tj, Tstg IAR EAS Parameter Drain-Source Voltage (VGS=0) Drain-Gate Voltage (RGS=20KΩ)

H01N45A Distributors

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