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H01N60 - N-Channel Power Field Effect Transistor

Product Overview

HI-SINCERITY

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H01N60 N-Channel Power Field Effect Transistor by HI-SINCERITY - Datasheet Preview — Datasheet preview – H01N60

Datasheet Details

Part number	H01N60
Manufacturer	HI-SINCERITY
File Size	57.53 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H01N60 Datasheet
Note	This datasheet PDF includes multiple part numbers: H01N60, H01N60-HI. Please refer to the document for exact specifications by model.
Additional preview pages of the H01N60 datasheet.

Product details

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

Features

1A, 600V, RDS(on)=8Ω@VGS=10V.
Low Gate Charge 15nC(Typ. ).
Low Crss 4pF(Typ. ).
Fast Switching.
Improved dv/dt Capability Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current (Continuous TC=25oC) Drain Current (Continuous TC=100oC) Drain Current (Pulsed).
1 Gate-Source Voltage Single Pulse Avalanche Energy (L=59mH, IAS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C) Avalanche Current.
1 Rep.

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