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H2N60D - N-Channel MOSFET

Download the H2N60D datasheet PDF. This datasheet also covers the H2N60U variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • 　Originative New Design 　　Superior Avalanche Rugged Technology 　　Robust Gate Oxide Technology 　　Very Low Intrinsic Capacitances 　　Excellent Switching Characteristics 　　Unrivalled Gate Charge: 5.5nC(Typ. ) 　　Extended Safe Operating Area 　　Lower RDS(ON): 4.0Ω(Typ. ) @ VGS=10V 　　100% Avalanche Tested 　　Package: TO-251 & TO-252（IPAK & DPAK） ID=1.8A BVDSS=600V RDS(on)=4.0Ω 　.
  • 　　,,,,,RoHS 　.
  • 　　、LCD、LED、、UPS、 　　、、、、、、 　　、、 　.
  • 　　TO-251（IPAK） 　　TO-252（DPAK） 2N60 Series Pin Assignment 3-Lea.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H2N60U-HAOHAI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H2N60D
Manufacturer HAOHAI
File Size 395.16 KB
Description N-Channel MOSFET
Datasheet download datasheet H2N60D Datasheet

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Other Datasheets by HAOHAI

Part Number Description
H2N60F N-Channel MOSFET
H2N60P N-Channel MOSFET
H2N60U N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2A, 600V, N H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI U: TO-251 D: TO-252 80/ 2.5K/ 2N60 Series N-Channel MOSFET 4Kpcs/ 5Kpcs/ 24Kpcs 25Kpcs 　■Features 　　Originative New Design 　　Superior Avalanche Rugged Technology 　　Robust Gate Oxide Technology 　　Very Low Intrinsic Capacitances 　　Excellent Switching Characteristics 　　Unrivalled Gate Charge: 5.5nC(Typ.) 　　Extended Safe Operating Area 　　Lower RDS(ON): 4.0Ω(Typ.) @ VGS=10V 　　100% Avalanche Tested 　　Package: TO-251 & TO-252（IPAK & DPAK） ID=1.8A BVDSS=600V RDS(on)=4.