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HM4853B Datasheet, H&M Semiconductor

HM4853B mosfet equivalent, p-channel enhancement mode power mosfet.

HM4853B Avg. rating / M : 1.0 rating-11

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HM4853B Datasheet

Features and benefits


* VDS = -12V,ID = -8A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-2.5V
* High power and current handing capability
* Lead free product is acquired
* .

Application

D1 G1 G2 D2 S1 S2 Schematic diagram General Features
* VDS = -12V,ID = -8A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) .

Description

The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 G1 G2 D2 S1 S2 Schematic diagra.

Image gallery

HM4853B Page 1 HM4853B Page 2 HM4853B Page 3

TAGS

HM4853B
P-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

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