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HM4850 - Dual N-Channel Enhancement Mode Power MOSFET

Description

The HM4850 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =40V,ID =5.0A RDS(ON) < 40mΩ @ VGS=10V RDS(ON) < 65mΩ @ VGS=4.5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

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Datasheet Details

Part number HM4850
Manufacturer H&M Semiconductor
File Size 637.72 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4850 Datasheet

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Full PDF Text Transcription

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HM4850 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4850 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ●VDS =40V,ID =5.0A RDS(ON) < 40mΩ @ VGS=10V RDS(ON) < 65mΩ @ VGS=4.
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