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HM4853 - P-Channel Enhancement Mode Power MOSFET

Description

The +0 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number HM4853
Manufacturer H&M Semiconductor
File Size 436.75 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4853 Datasheet

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Other Datasheets by H&M Semiconductor

Part Number Description
HM4853A P-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 G1 G2 D2 S1 S2 Schematic diagram General Features ● VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.
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