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HM4487A Datasheet, H&M Semiconductor

HM4487A mosfet equivalent, p-channel enhancement mode power mosfet.

HM4487A Avg. rating / M : 1.0 rating-11

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HM4487A Datasheet

Features and benefits


* VDS =-100V,ID =-7.5A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ)
* Super high dense cell design
* Advanced trench process techn.

Application

It is ESD protested. D G General Features
* VDS =-100V,ID =-7.5A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65m.

Description

The HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. D G General Features
* VDS =-100V,ID =-7.5A RDS(ON) <58mΩ @ VGS=-10.

Image gallery

HM4487A Page 1 HM4487A Page 2 HM4487A Page 3

TAGS

HM4487A
P-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

Manufacturer


H&M Semiconductor

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