* VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
* Super high dense cell design
* Advanced trench process technology
* Reliable and rugged

It is ESD protested. D G General Features
* VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
* Sup.

The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. D G General Features
* VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10.

HM4480

HM4482

HM4484

HM4485

HM4485A

HM4485B

HM4486A

HM4486E

HM4487A

HM4487B

HM4488

HM44

HM4402A

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