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HM4485B Datasheet, H&M Semiconductor

HM4485B mosfet equivalent, p-channel enhancement mode power mosfet.

HM4485B Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 444.42KB)

HM4485B Datasheet

Features and benefits


* VDS = -40V,ID = -7.5A RDS(ON) <42mΩ @ VGS=-10V RDS(ON) <70mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
* S.

Application

General Features
* VDS = -40V,ID = -7.5A RDS(ON) <42mΩ @ VGS=-10V RDS(ON) <70mΩ @ VGS=-4.5V
* High power and c.

Description

The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features
* VDS = -40V,ID = -7.5A RDS(ON) <42mΩ @ VGS=-10V RDS(ON) <70mΩ @ VGS=-4.5V
* .

Image gallery

HM4485B Page 1 HM4485B Page 2 HM4485B Page 3

TAGS

HM4485B
P-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

Manufacturer


H&M Semiconductor

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