* VDS =-40V,ID =-17.5A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <13mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche volta.

General Features
* VDS =-40V,ID =-17.5A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <13mΩ @ VGS=-4.5V
* High density cell .

The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =-40V,ID =-17.5A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <13mΩ @ VGS=-4.5V.

HM4485

HM4485B

HM4480

HM4482

HM4484

HM4486A

HM4486E

HM4487

HM4487A

HM4487B

HM4488

HM44

HM4402A

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts