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HM3407B - P-Channel Enhancement Mode Power MOSFET

Description

The HM3407B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V D G S Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM3407B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3407B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.
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