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HM2N15PR - N-Channel Enhancement Mode Power MOSFET

Description

The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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