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HM2N15PR Datasheet, H&M Semiconductor

HM2N15PR mosfet equivalent, n-channel enhancement mode power mosfet.

HM2N15PR Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 519.21KB)

HM2N15PR Datasheet
HM2N15PR
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 519.21KB)

HM2N15PR Datasheet

Features and benefits


* VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .

Application

General Features
* VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
* High density cell design for ultr.

Description

The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
* High de.

Image gallery

HM2N15PR Page 1 HM2N15PR Page 2 HM2N15PR Page 3

TAGS

HM2N15PR
N-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

Manufacturer


H&M Semiconductor

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