HM2N10B - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

The HM1% uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 100V,ID = 2A RDS(ON).

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HM2N10B n-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM2N10B
Manufacturer	H&M Semiconductor
File Size	285.62 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2N10B Datasheet

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Full PDF Text Transcription

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HM1% N-Channel Enhancement Mode Power MOSFET Description The HM1% uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Nov 27, 2018 |