• Part: HM2N10B
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 285.62 KB
Download HM2N10B Datasheet PDF
H&M Semiconductor
HM2N10B
Description The HM1% uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Excellent package for good heat dissipation S Schematic diagram Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package HM1% SOT-23 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) ID...