GSMEB2516Q datasheet, mosfet equivalent, Globaltech

Features and benefits

* 20V, 11A, RDS(ON)=8.2mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* G-S ESD Protection Diode Embedded
* Green Device Available
* DFN.

Application

Features
* 20V, 11A, RDS(ON)=8.2mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* G-S ESD Pro.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Image gallery