GSM02N15 datasheet, mosfet equivalent, Globaltech

Features and benefits

* 150V,1.4A, RDS(ON) =480mΩ@VGS = 10V
* Improved dv/dt capability
* TSOP-6 package design Applications
* Portable Equipment
* Battery Powered System <.

Application

Features
* 150V,1.4A, RDS(ON) =480mΩ@VGS = 10V
* Improved dv/dt capability
* TSOP-6 package design Applica.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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