GSM0910P datasheet, mosfet equivalent, Globaltech

Features and benefits

* 100V, 2A, RDS(ON)=200mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
* SOT-23 package des.

Application

Features
* 100V, 2A, RDS(ON)=200mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Gua.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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