GSM1012 mosfet equivalent, n-channel mosfet.
* 20V/0.6A,RDS(ON)=360m@VGS=4.5V
* 20V/0.5A,RDS(ON)=420m@VGS=2.5V
* 20V/0.4A,RDS(ON)=560m@VGS=1.8V
* Low Offset (Error) Voltage
* Low-Voltage Operatio.
Features
* 20V/0.6A,RDS(ON)=360m@VGS=4.5V
* 20V/0.5A,RDS(ON)=420m@VGS=2.5V
* 20V/0.4A,RDS(ON)=560m@VGS=1.8.
GSM1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-l.
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