GSMDS3810 mosfet equivalent, dual n-channel mosfet.
* 30V, 10A, RDS(ON)=13mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
* SOP-8 package desig.
Features
* 30V, 10A, RDS(ON)=13mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guar.
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.
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