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GSMDS3906 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 20A, RDS(ON)=6mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • SOP-8 package design.

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Datasheet Details

Part number GSMDS3906
Manufacturer Globaltech
File Size 496.92 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDS3906 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSMDS3906 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 30V, 20A, RDS(ON)=6mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ Green Device Available „ SOP-8 package design Applications „ Notebook „ Load Switch „ LED Applications „ Hand-Held Device Packages & Pin Assignments GSMDS3906SF (SOP-8) GSMDS3906 Top View Pin Description 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain www.
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