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GSMDS3807 - Dual P-Channel MOSFET

Description

These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V, -7A, RDS(ON)=23mΩ@VGS=-10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number GSMDS3807
Manufacturer Globaltech
File Size 404.07 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet GSMDS3807 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSMDS3807 30V Dual P-Channel MOSFETs Product Description These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -30V, -7A, RDS(ON)=23mΩ@VGS=-10V „ Improved dv/dt capability „ Fast switching „ Suit for -4.
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