GSMDS3807 mosfet equivalent, dual p-channel mosfet.
* -30V, -7A, RDS(ON)=23mΩ@VGS=-10V
* Improved dv/dt capability
* Fast switching
* Suit for -4.5V Gate Drive Applications
* Green Device Available
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Features
* -30V, -7A, RDS(ON)=23mΩ@VGS=-10V
* Improved dv/dt capability
* Fast switching
* Suit for -4.
These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.
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