GSMDS3710 mosfet equivalent, n+p dual-channel mosfet.
* N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V
* P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V
* Fast switching
* Suit for 4.5V / -4.5V Gate Drive Applications.
Packages & Pin Assignments
GSMDS3710SF (SOP-8)
Features
* N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V
* P-Channel.
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high.
Image gallery
TAGS
+P
Download (Size : 821.11KB)