* 150V, 4A, RDS(ON)=65mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* SOP-8 package design Applications
* Noteb.

Features
* 150V, 4A, RDS(ON)=65mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device .

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

GSMDS04N15

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