GSMDP0966A Datasheet, Globaltech

* 100V, 60A, RDS(ON)=18mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available
* TO-220 package des.

Features
* 100V, 60A, RDS(ON)=18mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS gua.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.