* 20V, 5.6A, RDS(ON)=26mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Suit for 1.8V Gate Drive Applications
* Green Device Available
*.

Features
* 20V, 5.6A, RDS(ON)=26mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Suit for 1..

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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