* -60V/-0.13A,RDS(ON)=10Ω@VGS=-5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

Features
* -60V/-0.13A,RDS(ON)=10Ω@VGS=-5V
* Super high density cell design for extremely low RDS (ON)
* E.

GSMBSS84, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts