Datasheet Details
| Part number | GSMBSS139Y |
|---|---|
| Manufacturer | Globaltech |
| File Size | 1.76 MB |
| Description | Dual N-Channel Enhancement MOSFET |
| Download | GSMBSS139Y Download (PDF) |
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| Part number | GSMBSS139Y |
|---|---|
| Manufacturer | Globaltech |
| File Size | 1.76 MB |
| Description | Dual N-Channel Enhancement MOSFET |
| Download | GSMBSS139Y Download (PDF) |
|
|
|
These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology.
This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode.
These Devices are well Suited for High Efficiency Fast Switching Applications.
GSMBSS139Y Dual N-Channel Enhancement MOSFET Product.
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