GSMBSS139Y mosfet equivalent, dual n-channel enhancement mosfet.
* 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V
* Improved dv/dt Capability
* Fast Switching
* Green Device Available
* SOT-563 Package Design
* ESD Protected .
Features
* 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V
* Improved dv/dt Capability
* Fast Switching
* Green Devic.
These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high E.
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