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GSMBSS139Y Datasheet, Globaltech

GSMBSS139Y mosfet equivalent, dual n-channel enhancement mosfet.

GSMBSS139Y Avg. rating / M : 1.0 rating-15

datasheet Download (Size : 1.76MB)

GSMBSS139Y Datasheet

Features and benefits


* 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V
* Improved dv/dt Capability
* Fast Switching
* Green Device Available
* SOT-563 Package Design
* ESD Protected .

Application

Features
* 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V
* Improved dv/dt Capability
* Fast Switching
* Green Devic.

Description

These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high E.

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TAGS

GSMBSS139Y
Dual
N-Channel
Enhancement
MOSFET
Globaltech

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