GSMBSS139 datasheet, mosfet equivalent, Globaltech

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Features and benefits

* 50V, 0.2A, RDS(ON)=3.5Ω@VGS=5V
* Improved dv/dt Capability
* Fast Switching
* Low Threshold Voltage(VGS(th)：0.5…1.5V) Makes It Ideal for Low Voltage App.

Application

Packages & Pin Assignments GSMBSS139JZF (SOT-23) Features
* 50V, 0.2A, RDS(ON)=3.5Ω@VGS=5V
* Improved dv/dt Ca.

Description

These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy.

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