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GSMBSS123 - N-Channel MOSFET

General Description

The GSMBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Key Features

  • 100V, 0.17A, RDS(ON)=6.0Ω@VGS=10V.
  • SOT-23 package design.
  • Lead(Pb)-Free.

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Datasheet Details

Part number GSMBSS123
Manufacturer Globaltech
File Size 229.90 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMBSS123 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description The GSMBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Features „ 100V, 0.17A, RDS(ON)=6.0Ω@VGS=10V „ SOT-23 package design „ Lead(Pb)-Free Applications „ DC to DC Converter „ Cellular & PCMCIA Card „ Cordless Telephone „ Power Management in Portable and Battery etc. Packages & Pin Assignments GSMBSS123JZF (SOT-23) GSMBSS123 Pin Description 1 Gate 2 Source 3 Drain Ordering Information GS P/N GSMBSS123 JZ F Package Code Pb Free Code Part Number GSMBSS123JZF Package SOT-23 Quantity 3000 PCS www.gs-power.