GSM8968 datasheet, mosfet equivalent, Globaltech

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Features and benefits

* 100V/3.0A,RDS(ON)=300mΩ@VGS=10V
* 100V/2.0A,RDS(ON)=310mΩ@ VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* SOT-89-3L package desig.

Application

Features
* 100V/3.0A,RDS(ON)=300mΩ@VGS=10V
* 100V/2.0A,RDS(ON)=310mΩ@ VGS=4.5V
* Super high density cell d.

Description

GSM8968, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low inline power loss are needed in commercial indu.

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