GSM8412 datasheet, mosfet equivalent, Globaltech

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Features and benefits

* 100V/3.6A,RDS(ON)=300mΩ@VGS=10V
* 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* SOT-223 package design .

Application

Packages & Pin Assignments GSM8412XF (SOT-223) Features
* 100V/3.6A,RDS(ON)=300mΩ@VGS=10V
* 100V/3.0A,RDS(ON)=.

Description

GSM8412, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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