GSM8931 datasheet, mosfet equivalent, Globaltech

Features and benefits

* -30V/-4.6A,RDS(ON)=36mΩ@VGS=-10V
* -30V/-3.6A,RDS(ON)=46mΩ@ VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* SOT-89-3L package des.

Application

Features
* -30V/-4.6A,RDS(ON)=36mΩ@VGS=-10V
* -30V/-3.6A,RDS(ON)=46mΩ@ VGS=-4.5V
* Super high density cell.

Description

GSM8931, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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