GSM7002T mosfet equivalent, dual n-channel mosfet.
* 60V/0.50A,RDS(ON)=2.0Ω@VGS=10V
* 60V/0.20A,RDS(ON)=4.0Ω@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* Exceptional on-resistance.
requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low vol.
The GSM7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.
These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching pe.
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