GSM6911P datasheet, mosfet equivalent, Globaltech

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datasheet Download (Size : 622.32KB)

Features and benefits

* -60V, -3.1A, RDS(ON)=190mΩ@VGS=-10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
* SOT-23 package.

Application

Features
* -60V, -3.1A, RDS(ON)=190mΩ@VGS=-10V
* Improved dv/dt capability
* Fast switching
* 100% EAS.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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