GSM6562 datasheet, mosfet equivalent, Globaltech

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Features and benefits

* 30V/3.6A,RDS(ON)=70mΩ@VGS=10V
* 30V/3.0A,RDS(ON)=78mΩ@VGS=4.5V
* 30V/2.2A,RDS(ON)=95mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS (.

Application

Packages & Pin Assignments GSM6562TSF(TSOP-6) Features
* 30V/3.6A,RDS(ON)=70mΩ@VGS=10V
* 30V/3.0A,RDS(ON)=78mΩ.

Description

GSM6562, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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