GSM6601 datasheet, mosfet equivalent, Globaltech

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Features and benefits

* N-Channel 30V/3.4A,RDS(ON)=68mΩ@VGS=10V 30V/3.0A,RDS(ON)=74mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=90mΩ@VGS=2.5V
* P-Channel -30V/-2.6A,RDS(ON)=115mΩ@VGS=-10V -30V/-2.0A,R.

Application

Packages & Pin Assignments GSM6601TSF (TSOP-6) Features
* N-Channel 30V/3.4A,RDS(ON)=68mΩ@VGS=10V 30V/3.0A,RDS(ON).

Description

GSM6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

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