GSM4600 mosfet equivalent, mosfet.
N-Channel
* 100V, 9.8A, RDS(ON)=155mΩ@VGS=10V
* 100V, 9.8A, RDS(ON)=175mΩ@VGS=4.5V P-Channel
* -100V, -9A, RDS(ON)=160mΩ@VGS=-10V
* -100V, -9A, RDS(ON)=18.
are PWM DC-DC converters, power management in portable and battery powered products such as computers, printers, battery.
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(ON) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
Typical applications are PWM DC-DC converters, power.
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