GSM4435S mosfet equivalent, p-channel mosfet.
* -30V/-9A,RDS(ON)=18mΩ@VGS=-10V
* -30V/-7A,RDS(ON)=26mΩ@VGS=-4.5V
* Super high density cell design for extremely
low RDS (ON)
* SOP-8P package design
App.
Features
* -30V/-9A,RDS(ON)=18mΩ@VGS=-10V
* -30V/-7A,RDS(ON)=26mΩ@VGS=-4.5V
* Super high density cell desi.
GSM4435S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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