GSM4422 datasheet, mosfet equivalent, Globaltech

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 413.57KB)

Features and benefits

* 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V
* 30V/ 6.0A,RDS(ON)=42mΩ@VGS=4.5V
* 30V/ 5.2A,RDS(ON)=50mΩ@VGS=2.5V
* Super high density cell design for extremely low RD.

Application

Packages & Pin Assignments GSM4422SF (SOP-8) Features
* 30V/ 6.8A,RDS(ON)=36mΩ@VGS=10V
* 30V/ 6.0A,RDS(ON)=42m.

Description

GSM4422, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

Image gallery