SSF3612 mosfet equivalent, n-channel mosfet.
* VDS = 30V,ID =11.6A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V
* High Power and current handing capability
* Lead free product
* Surface Mount P.
GENERAL FEATURES
* VDS = 30V,ID =11.6A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V
* High Power and curr.
The SSF3612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* VDS = 30V,ID =11.6A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ.
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