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IRFD2Z1 Datasheet, GE

IRFD2Z1 transistor equivalent, field effect power transistor.

IRFD2Z1 Avg. rating / M : 1.0 rating-11

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IRFD2Z1 Datasheet

Features and benefits


* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature

Application

including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating.

Image gallery

IRFD2Z1 Page 1 IRFD2Z1 Page 2

TAGS

IRFD2Z1
FIELD
EFFECT
POWER
TRANSISTOR
IRFD2Z0
IRFD210
IRFD210PBF
GE

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