Datasheet4U Logo Datasheet4U.com

IRFD210 - N-Channel Power MOSFET

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Features

  • 0.6A, 200V.
  • rDS(ON) = 1.500Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD210.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFD210 Power MOSFET International Rectifier
IRFD210 Power MOSFET Vishay
IRFD210 FIELD EFFECT POWER TRANSISTOR GE
IRFD210PBF HEXFET Power MOSFET International Rectifier
IRFD211 FIELD EFFECT POWER TRANSISTOR GE

Other Datasheets by Intersil (Renesas)

Part Number Description
IRFD220 N-Channel Power MOSFET
IRFD110 N-Channel Power MOSFET
IRFD120 N-Channel Power MOSFET
IRFD310 N-Channel Power MOSFET
IRFD320 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFD210 Data Sheet July 1999 File Number 2316.3 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17442. Features • 0.6A, 200V • rDS(ON) = 1.
Published: |