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IRFD212 Datasheet, GE

IRFD212 transistor equivalent, field effect power transistor.

IRFD212 Avg. rating / M : 1.0 rating-11

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IRFD212 Datasheet

Features and benefits


* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature

Application

including: switching power . supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operati.

Image gallery

IRFD212 Page 1 IRFD212 Page 2

TAGS

IRFD212
FIELD
EFFECT
POWER
TRANSISTOR
IRFD210
IRFD210PBF
IRFD211
GE

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